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Tên báo cáoA general numerical approach to high harmonic generation in semiconductors
Người trình bàyDr. Huynh Thanh Duc
Cơ quanInstitute of Applied Mechanics and Informatics, HCM city
NgàyThứ Sáu, 17-06-2022
Giờ10:00 AM
Địa điểmPhòng 62, tầng 6, tòa nhà 2H, 18 Hoàng Quốc Việt, Cầu Giấy, Hà Nội
Tóm tắtIt is well known that numerical diagonalization procedures using in the electronic band structure calculation result typically in an arbitrary phase factor of non-degenerate states and mix degenerate states in an arbitrary way for each value of the crystal momentum k. These ambiguities are problematic if one studies semiconductor optics in length gauge (E.r) since the matrix elements of the position operator involve a derivative of the wave functions with respect to k. This problem has been solved by implementing a proper gauge transformation. The length gauge turns out to be advantageous since it converges for a smaller number of bands than the velocity gauge and, in addition, enables a unique distinction between inter- and intraband contributions. Our calculated results for high-harmonic generation from GaAs are in good agreement with recent experimental data. Besides odd harmonics polarized parallel to the incident field our approach also describes even harmonics polarized perpendicular to the field which originate from the Berry curvature. Google meet: meet.google.com/dgw-epwa-tsi
Người chủ trìTrần Minh Tiến